Part Number | STM STP180N10F3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 120A TO220 |
Series | STripFET,III |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6665pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 315W (Tc) |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 60A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP180N10F3
INFIENON
1743
0.78
HK HEQING ELECTRONICS LIMITED
STP180N10F3
Infinen
2781
1.3275
Gallop Great Holdings (Hong Kong) Limited
STP180N10F3
INFLNEON
3313
1.875
CIS Ltd (CHECK IC SOLUTION LIMITED)
STP180N10F3
Infineon Technologies A...
2532
2.4225
N&S Electronic Co., Limited
STP180N10F3
INFINEON/IR
6758
2.97
FLOWER GROUP(HK)CO.,LTD