Part Number | STW69N65M5-4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 58A TO-247-4 |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6420pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 330W (Tc) |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 29A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4L |
Package / Case | TO-247-4 |
Image |
STW69N65M5-4
INFIENON
20000
0.58
HK XINYI COMPONENTS ASIA CO., LIMITED
STW69N65M5-4
Infinen
1000
1.0925
STH Electronics Co.,Ltd
STW69N65M5-4
INFLNEON
350
1.605
WIDEY INTERNATIONAL LIMITED
STW69N65M5-4
Infineon Technologies A...
350
2.1175
YUFO ELECTRONICS LIMITED
STW69N65M5-4
INFINEON/IR
100000
2.63
VBsemi Electronics Co., Limited